UHV ion beam sputtering system for nanometer precise coatings and etching procedures
![UHV ion beam sputtering system for nanometer precise coatings and etching procedures UHV ion beam sputtering system for nanometer precise coatings and etching procedures](/en/technologyfields/pvd_nanotechnology/xray_euv_optics/equipment/uhv-ion-beam-sputtering-system/jcr:content/contentPar/sectioncomponent/sectionParsys/textblockwithpics/imageComponent1/image.img.jpg/1646403997646/uhv-ionenstrahlsputteranlage.jpg)
UHV ion beam sputtering system for nanometer precise coatings and etching procedures
![Arrangement of ion source, targets and substrate in the ion beam sputtering system Arrangement of ion source, targets and substrate in the ion beam sputtering system](/en/technologyfields/pvd_nanotechnology/xray_euv_optics/equipment/uhv-ion-beam-sputtering-system/jcr:content/contentPar/sectioncomponent/sectionParsys/textblockwithpics/imageComponent2/image.img.jpg/1646403981836/uhv-ionenstrahlsputteranlagen-prinzip-400x330.jpg)
Arrangement of ion source, targets and substrate in the ion beam sputtering system
Technical data
- vacuum:
- process chamber: p < 2·10-8 mbar
- load lock: p < 5·10-7 mbar
- substrate:
- round up to Ø = 200 mm
- square to L = 500 mm (without spin)
- targets: 6 pieces, size: 400 x 200 mm2
- ion beam sources:
- primary source for target sputtering
- secondary source for assisting and etching operation
- activation: ECR (electrode cyclotron resonance)
- size: 400 x 100 mm2
- ion energies: E = 50 - 2000 eV
- optics:
- for beam shaping and film thickness homogenization processes
- 4 pieces, automatically exchangeable
Application
- synthesis of nanometer single- and multilayers for X-ray and EUV- optical systems
- synthesis of dielectrical multilayers for laser optical systems
Characteristics
- extremely low micro roughnesses in the range of σrms = 0.15 ... 0.3 nm
- uniformity: 99.0 - 99.9 % over Ø 200 mm
- absorption-free dielectrical coatings within the UV-IR spectral range